- V(CE)
- 1200 V
- I(C)
- 281 A
- V(CEsat)
- 1.57 V
- 封装
- SOT-227
- Q(g)
- NO
- P(tot)
- 862 W
- P(tot)
- NO
- t(r)
- 59 nS
- td(off)
- 334 nS
- td(开)
- 192 nS
- 安装
- SMD
- RoHS Status
- RoHS-conform
- 技术
- IGBT
- 包装
- TUBE
- 出口控制分类编号
- EAR99
- 海关税号
- 85412900000
- 国家或地区
- Philippines
- ABC 编码
- A
- 生产商交期
- 14 周
Insulated Gate Bipolar Transistor (Trench IGBT), 180 A
FEATURES
- 1200 V trench and field stop technology
- Low switching losses
- Positive temperature coefficient
APPLICATIONS
- Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating
- Easy to assemble and parallel
- Direct mounting to heatsink