- V(CE)
- 650 V
- I(C)
- 20 A
- V(CEsat)
- 1,65 V
- 封装
- TO263SP
- Q(g)
- Yes
- P(tot)
- 161 W
- P(tot)
- NO
- t(r)
- 27 nS
- td(off)
- 75 nS
- td(开)
- 22 nS
- 安装
- SMD
- RoHS Status
- RoHS-conform
- 技术
- Trench
- 包装
- REEL
- 出口控制分类编号
- EAR99
- 海关税号
- 85412900000
- 国家或地区
- South Korea
- ABC 编码
- B
- 生产商交期
- 26 周
5µs Short-Circuit Tolerance, 650V 20A, Built in FRD, LPDS, Field Stop Trench IGBT - RGT40NS65D(LPDS)
Features:
- Low Collector - Emitter Saturation Voltage
- Low Switching Loss
- Short Circuit Withstand Time 5us
- Built in Very Fast & Soft Recovery FRD (RFN - Series)
- Pb - free Lead Plating ; RoHS Compliant