- Configuration
 - N-CH
 - V(DS)
 - 60 V
 - I(D)at Tc=25°C
 - 324 A
 - RDS(on)at 10V
 - 1.2 mOhm
 - Q(g)
 - 174 nC
 - P(tot)
 - 375 W
 - R(thJC)
 - 0.4 K/W
 - Logic level
 - NO
 - Mounting
 - SMD
 - Technology
 - StrongIR
 - Fast bodydiode
 - YES
 - P(tot)
 - NO
 - 封装
 - TO-263-7
 - RoHS Status
 - RoHS-conform
 - 包装
 - REEL
 
- 生产商产品料号
 - SP001646070
 - 出口控制分类编号
 - EAR99
 - 海关税号
 - 85412900000
 - 国家或地区
 - Mexico
 - ABC 编码
 - A
 - 生产商交期
 - 14 周
 
								Infineon’s latest 60 V StrongIRFET™ power MOSFET devices are optimized for both high current and low RDS(on) making them the ideal solution for high current battery powered applications.
											Summary of Features
- Low RDS(on) High current capability Industry standard package Flexible pinout Optimized for 5 V gate drive
 
Benefits
- Reduction in conduction losses Increased power density Drop in replacement to existing devices Offers design flexibility Provides immunity to false turn-on in noisy environments Can be driven during low battery conditions
 
| Follow-up article | 
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