- Configuration
- N-CH
- V(DS)
- 60 V
- I(D)at Tc=25°C
- 360 A
- RDS(on)at 10V
- 0.945 mOhm
- Q(g)
- 311 nC
- P(tot)
- 417 W
- R(thJC)
- 0.36 K/W
- Logic level
- NO
- Mounting
- SMD
- Technology
- StrongIR
- Fast bodydiode
- YES
- P(tot)
- NO
- 封装
- TO-263-7
- RoHS Status
- RoHS-conform
- 包装
- REEL
- 生产商产品料号
- SP001646066
- 出口控制分类编号
- EAR99
- 海关税号
- 85412900000
- 国家或地区
- Mexico
- ABC 编码
- A
- 生产商交期
- 14 周
Infineon’s latest 60 V StrongIRFET™ power MOSFET devices are optimized for both high current and low RDS(on) making them the ideal solution for high current battery powered applications.
Summary of Features
- Low RDS(on) High current capability Industry standard package Flexible pinout Optimized for 10 V gate drive
Benefits
- Reduction in conduction losses Increased power density Drop in replacement to existing devices Offers design flexibility Provides immunity to false turn-on in noisy environments
| Follow-up article |
包装单位
单价 |
库存信息 | ||||
|---|---|---|---|---|---|---|
首选产品
|
IPF012N06NF2SATMA1NCH 60V 250A 1,2mOhm TO263-7
产品料号:
STDMOS1428
封装:
TO-263-7
包装:
REEL
|
单价
1,86 $
|
包装单位
800
|
库存信息
|
价格、交期
数据手册
| |
