IKW75N65SS5XKSA1
Description:
IGBT 650V 75A +SIC-DIODE TO-247
生产商:
INFINEON
产品描述代码:
IKW75N65SS5
Rutronik No.:
IGBT2912
包装单位:
30
最低订购量:
240
封装:
TO247-3
包装:
TUBE
数据手册- 生产商产品料号
- SP004038158
- 出口控制分类编号
- EAR99
- 海关税号
- 85412900000
- 国家或地区
- China
- ABC 编码
- A
- 生产商交期
- 28 周
650 V, 75 A IGBT Discrete with CoolSiC™ diode
650 V, 75 A TRENCHSTOP™ 5 S5 IGBT co-packed with full-rated 6th generation CoolSiC™ Schottky barrier diode in TO-247-3 package.
The 650 V hard-switching TRENCHSTOP™ 5 S5 IGBT technology addresses applications switching between 10 kHz and 40 kHz and due to high controllability and smooth switching behavior delivers not only high efficiency, but is easy to design-in.
Combination of the TRENCHSTOP™ 5 S5 IGBT technology with the freewheeling SiC Schottky barrier diodes further reduces switching losses at almost unchanged dv/dt and di/dt values.
Summary of Features
- Ultra-low switching losses due to the combination of TRENCHSTOP™ 5 IGBT and CoolSiC™ diode technology
- Very low on-state losses
- Benchmark switching efficiency in hard switching topologies
- Qualified according to JEDEC for target applications
- Pb-free lead plating; RoHS compliant
- Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22
Benefits
- Highest efficiency
- Reduced cooling effort
- Increased power density
- Plug & play replacement of the pure silicon devices
- Easy upgrade of existing designs for higher efficiency
- Excellent for paralleling
- Power Management (SMPS) - Reference Design
- Solutions for solar energy systems
- Uninterruptible Power Supply (UPS)
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