IKW75N60TFKSA1
Description:
IGBT 600V 80A 2.0V TO247-3
生产商:
INFINEON
产品描述代码:
IKW75N60T
Rutronik No.:
TMOSP7058
包装单位:
30
最低订购量:
240
封装:
TO247-3
包装:
TUBE
数据手册- 生产商产品料号
- SP000054889
- 出口控制分类编号
- EAR99
- 海关税号
- 85412900000
- 国家或地区
- China
- ABC 编码
- A
- 生产商交期
- 21 周
Infineon's TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
Summary of Features
- Lowest V CEsat drop for lower conduction losses
- Low switching losses
- Easy parallel switching capability due to positive temperature coefficient in V CEsat
- Very soft, fast recovery anti-parallel Emitter Controlled Diode
- High ruggedness, temperature stable behavior
- Low EMI emissions
- Low gate charge
- Very tight parameter distribution
Benefits
- Highest efficiency – low conduction and switching losses
- Comprehensive portfolio in 600V and 1200V for flexibility of design
- High device reliability
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