- V(CE)
- 650 V
- I(C)
- 20 A
- V(CEsat)
- 1,65 V
- 封装
- TO-220
- Q(g)
- YES
- P(tot)
- 63 W
- P(tot)
- NO
- t(r)
- 8 nS
- td(off)
- 156 nS
- td(开)
- 18 nS
- 安装
- THT
- RoHS Status
- RoHS-conform
- 技术
- Trench
- 包装
- TUBE
- 生产商产品料号
- SP001133078
- 出口控制分类编号
- EAR99
- 海关税号
- 85412900000
- 国家或地区
- Malaysia
- ABC 编码
- B
- 生产商交期
- 21 周
High Speed 650 V, 20 A hard-switching IGBT TRENCHSTOPTM 5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-220 package, is defined as "best-in-class" IGBT.
Summary of Features
- 650 V breakthrough voltage
- Compared to best-in-class HighSpeed 3 family
- Factor 2.5 lower Qg
- Factor 2 reduction in switching losses
- 200mV reduction in VCEsat
- Co-packed with Rapid Si-diode technology
- Low COES/EOSS
- Mild positive temperature coefficient VCEsat
- Temperature stability of Vf
Benefits
- best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability
- 50 V increase in the bus voltage possible without compromising reliability
- Higher power density design
Target Applications
- Uninterruptible power supply (UPS)
- Industrial heating and welding