- Polarity
- NPN
- U(cc) max
- 2.25 V
- Frequency f
- 5500 MHz
- P(out)
- 0.075 W
- 封装
- SOT343
- P(tot)
- NO
- RoHS Status
- RoHS-conform
- 包装
- REEL
- 生产商产品料号
- SP000943010
- 出口控制分类编号
- EAR99
- 海关税号
- 85412100000
- 国家或地区
- China
- 生产商交期
- 17 周
The BFP840ESD is a discrete hetero-junction bipolar transistor (HBT) specifically designed for high performance 5 GHz band.
Summary of Features:
- Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power, 1.5kV HBM ESD hardness
- High transition frequency fT = 80 GHz to enable low noise figure at high frequencies: e.g. Nfmin = 0.85 dB at 5.5 GHz, 1.8 V, 6 mA
- High gain Gms = 22.5 dB at 5.5 GHz, 1.8 V, 10 mA
- OIP3 = 22 dBm at 5.5 GHz, 1.8 V, 10 mA
- Suitable for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V require a corresponding collector resistor)
- Mobile and fixed connectivity applications: WLAN 802.11, WiMAX and UWB
- Satellite communication systems: satellite radio (SDARs, DAB), navigation systems (e.g. GPS, Glonass, Beidou, Galileo)