1EDF5673KXUMA1

Positive and negative gate drive currents:
  Fast turn-on / turn-off GaN switch slew-rates

Firmly holds gate voltage at zero, during off-phase:
  Avoids spurious GaN switch turn-on
  Up to 50% lower dead-time losses

Configurable and constant GaN switching slew-rates, across wide range of switching frequency and duty-cycle:
  Robust and energy efficient SMPS designs
  Short time-to-market

Integrated galvanic isolation:
  Robust operation in hard-switching applications
  Safe isolation where needed

Low ohmic outputs:
  Source: 0.85 Ω
  Sink: 0.35 Ω

Single-channel galvanic isolation:
  Functional: VIO= 1500 VDC
                           VIOWM = 510 Vrms (16-pin DSO)
                           VIOWM = 460 Vrms (LGA 5x5)
  Reinforced: VIOTM = 8000 Vpk
                           (VDE 0884-10 pending)
                           VIOWM = 1420 VDC
  CMTI min:    200V/ns 

Timing:
  Minimum output pulse width: 18 ns
  Propagation delay accuracy: 13 ns

• Totem-pole PFCs
• Vienna rectifiers
• Multi-level topologies
• Resonant LLC

• Server power supply
• Datacom
• Telecom DC-DC
• Adapter power supply
• Charger power supply
• Wireless charging