IGW25N120H3
图片仅供参考
生产商: INFINEON
产品描述代码: IGW25N120H3
Rutronik No.: IGBT1162
包装单位: 30
最低订购量: 30
封装: TO247-3
包装: TUBE
IGBT 1200V 50A 2.05V TO247-3 描述
Description:
High speed 1200 V, 25 A single TRENCHSTOP™ IGBT3 in a TO247 package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.
Summary of Features:
- Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70 kHz
- Low switching losses for high efficiency
- Excellent VCEsat behavior thanks to the famous Infineon TRENCHSTOP™ technology
- Fast switching behavior with low EMI emissions
- Optimized diode for target applications, meaning further improvement in switching losses
- Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
- Short circuit capability
- Offering Tj(max) of 175°C
- Packaged with and without freewheeling diode for increased design freedom
Benefits:
- Low switching and conduction losses
- Very good EMI behavior
- Can be used with a small gate resistor for reduced delay time and voltage overshoot
- High current density
- Best-in-class 1200 V IGBT efficiency and EMI behavior
Target Applications:
- Industrial heating and welding
- solar
- power supply
参数
- V(CE)
- 1200 V
- I(C)
- 50 A
- V(CEsat)
- 2.40 V
- 封装
- TO247-3
- Q(g)
- NO
- P(tot)
- 326 W
- P(tot)
- NO
- t(r)
- 41 nS
- td(off)
- 277 nS
- td(开)
- 27 nS
- 安装
- THT
- RoHS Status
- RoHS-conform
- 技术
- HighSpeed
- 包装
- TUBE
- 生产商产品料号
- SP000674424
- 出口控制分类编号
- EAR99
- 海关税号
- 85412900000
- 国家或地区
- China
- ABC 编码
- A
- 生产商交期
- 21 周
