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1EDN7550B

INFINEON SP001690382

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INFINEON

EiceDRIVER 1EDN 4/8A 4V SOT-23
生产商: INFINEON
产品描述代码: 1EDN7550B
Rutronik No.: ICGDRV1260
包装单位: 3000
最低订购量: 3000
封装: SOT-23
包装: REEL
数据手册
数据手册

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0.4866 $
1,459.80 $

价格

3,000 0.4866 $
6,000 0.4379 $

EiceDRIVER 1EDN 4/8A 4V SOT-23 描述

1-channel non-isolated gate-driver IC family with truly differential Inputs

The 1EDN7550B is a non-isolated gate-driver IC  and available in a small SOT-23 package. It has truly differential inputs enabling cost-effective solutions with exceptional power density in:
• Boost-PFC with Kelvin-source MOSFETs
• Synchronous rectification stages
• Designs with long distance between control IC and gate-driver IC
• Buck-boost converters
• Low- and medium-voltage half-bridges
• High density 48V to 12V intermediate bus converter


Summary of Features
• Truly differential inputs for configurable common mode robustness
• 4A source current
• 8A sink current
• Separate source/sink outputs
• Low-ohmic output stage
• 29ns input minimum pulse width
• -7 ns/+10 ns propagation delay accuracy
• 5A reverse current robustness of the outputs
• 4V UVLO version
• TSNP-6 package


Benefits
• Robust
• Small
• PCB layout flexibility
• High power density
• Short time to market


Potential applications
• Boost-PFCs with Kelvin-source MOSFETs
• Interleaved PFC
• Full-bridge synchronous rectification stages
• 48V to 12V intermediate bus converters
• Buck-boost converters
• Low- and medium-voltage half-bridges


Application benefits
• Robust against ground shifts from power MOSFET switching
• Low MOSFET switching losses
• Robust against false MOSFET triggering
• Highest effective MOSFET driving power
• Efficiency gains
• Increased power density and BOM savings
• Instant MOSFET protection under abnormal operation
• High power density


参数

Inom(max)
Driver
通道
1
T(j)最小
-40 °C
T(j)最大
150 °C
V(in) 最大
4.5 V
V(in) 最大
20 V
OL Detection
YES
P(tot)
NO
封装
SOT-23
RoHS Status
RoHS-conform
包装
REEL
生产商产品料号
SP001690382
出口控制分类编号
EAR99
海关税号
85423990000
国家或地区
China
ABC 编码
B
生产商交期
15 周
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