1EDF5673F
图片仅供参考
生产商: INFINEON
产品描述代码: 1EDF5673F
Rutronik No.: ICGDRV1239
包装单位: 1000
最低订购量: 2500
封装: DSO-16
包装: REEL
1xHSS GaN DRV iso 2.7V 8A DSO16 描述
GaN EiceDRIVER™ 1EDF5673F
Single-channel isolated gate driver IC for high voltage GaN switches
Description:
The new single-channel galvanically isolated gate driver IC component 1EDF5673F is a perfect fit for enhancement mode GaN HEMTs with non-isolated gate (diode input characteristic) and low threshold voltage, such as CoolGaN™. It ensures robust and highly efficient high voltage GaN switch operation whilst concurrently minimizing R&D efforts and shortening time-to-market.
Positive and negative gate drive currents:
Fast turn-on / turn-off GaN switch slew-rates
Firmly holds gate voltage at zero, during off-phase:
Avoids spurious GaN switch turn-on
Up to 50% lower dead-time losses
Configurable and constant GaN switching slew-rates, across wide range of switching frequency and duty-cycle:
Robust and energy efficient SMPS designs
Short time-to-market
Integrated galvanic isolation:
Robust operation in hard-switching applications
Safe isolation where needed
Low ohmic outputs:
Source: 0.85 Ω
Sink: 0.35 Ω
Single-channel galvanic isolation:
Functional: VIO= 1500 VDC
VIOWM = 510 Vrms (16-pin DSO)
VIOWM = 460 Vrms (LGA 5x5)
Reinforced: VIOTM = 8000 Vpk
(VDE 0884-10 pending)
VIOWM = 1420 VDC
CMTI min: 200V/ns
Timing:
Minimum output pulse width: 18 ns
Propagation delay accuracy: 13 ns
- Totem-pole PFCs
- Vienna rectifiers
- Multi-level topologies
- Resonant LLC
- Server power supply
- Datacom
- Telecom DC-DC
- Adapter power supply
- Charger power supply
- Wireless charging
参数
- Inom(min)
- GaN DRV
- P(tot)
- NO
- 封装
- DSO-16
- RoHS Status
- RoHS-conform
- 包装
- REEL
- 生产商产品料号
- SP003194020
- 出口控制分类编号
- EAR99
- 海关税号
- 85423919000
- 国家或地区
- Indonesia
- 生产商交期
- 15 周
